Using GaNext technology to enable compact and energy efficient power systems

Neways contributed to the development of next generation Gallium Nitride (GaN) based power electronics as part of the international GaNext cooperation program. GaN technology is considered a key enabler for more compact, lightweight and energy efficient power systems compared to conventional silicon based solutions.

Within the project, Neways co-developed an intelligent GaN power module in which controllers, drivers and protection circuits were fully integrated together with the power devices into a compact module architecture.

Challenges

As power electronics continue to evolve towards higher efficiency and increased power density, conventional silicon technologies are reaching their physical limitations in applications such as e mobility, renewable energy systems and compact power conversion.

GaN technology offers significant advantages in switching performance, efficiency and miniaturization, but also introduces new challenges in thermal management, integration complexity and system level control. To fully benefit from the technology, the power devices, control electronics and protection functionalities need to operate together within highly integrated module architectures.

Neways applied its systems engineering expertise to integrate the intelligent GaN power module into an extremely compact solar PV inverter platform, enabling improved efficiency and reduced system size while maintaining reliable operation.

The development was carried out within the international GaNext consortium, bringing together companies, research institutes and universities from the Netherlands, Germany and the United Kingdom to accelerate the development of advanced GaN based power technologies.

Key results

The collaboration resulted in the successful co-development of an intelligent GaN power module integrated into a highly compact solar PV inverter application.

By combining advanced GaN technology with integrated control and protection functionalities, the solution achieved energy efficiency improvements of more than 20% compared to conventional silicon based approaches, while also contributing to the miniaturization of future power electronics systems.

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