Using GaNext technology to enable compact and energy efficient power systems

Gallium Nitride (GaN) is a promising material to replace silicon in power electronics application. GaN technology is the next logical step supporting the current trend towards e-mobility, making energy supply more sustainable, and enabling more compact power applications. Power systems based on GaN can be lighter, more compact, significantly more efficient and cheaper than those based on silicon.

We have co-developed an intelligent GaN power module where the controller, drivers and protection circuits are co-packaged with the power devices. We applied this module in an extremely compact solar PV inverter that contributes to the miniaturization of power applications. This application is a result of Neways’ systems engineering based design methodology in which we combined the GaN technology in an intelligent power module.


This development is part of the international GaNext cooperation program, in which 13 companies from the Netherlands, Germany and the United Kingdom are working together to develop an intelligent power module based on GaN power transistors. Consortium partners include Cambridge GaN Devices Ltd., CSA Catapult, Lyra Electronics Ltd., Besi Netherlands BV, Eindhoven University of Technology, Neways Technologies BV, Signify, advICo microelectronics GmbH, Maccon Elektroniksysteme GmbH, Infineon Technologies AG, SUMIDA Components & Modules GmbH, Technische Universität Dortmund and Fraunhofer IMS.

Key results

  • Higher energy efficiency
    > 20 %

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